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ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions 8.0 V ? V PWR = V SUP ? 40 V, -40 ? C ? T A ? 135 ? C, unless otherwise noted. Typical
values noted reflect the approximate parameter means at T A = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
CURRENT SENSE AMPLIFIER (CONTINUED)
Output Rise Time to 90% (50)
t IS_RISE
μs
RL = 1.0 k ? , C L = 500 pF, 0.3 V < V O < 4.8 V, Gain = 5.0 to 15
Output Fall Time to 10% (50)
RL = 1.0 k ??? C L = 500 pF, 0.3 V < V O < 4.8 V, Gain = 5.0 to 15
Slew Rate at Gain = 5.0 (49)
RL = 1.0 k ? , C L = 20 pF
t IS_FALL
SR (5)
–
–
5.0
–
–
–
1.0
1.0
–
μs
V/μs
Phase Margin at Gain = 5.0 (49)
(49)
Unity Gain Bandwidth
RL = 1.0 k ? , C L = 100 pF
f M
G BW
–
–
30
20
–
–
°
MHz
Bandwidth at Gain = 15 (49)
BW G
MHz
R L = 1.0 k ? , C L = 50 pF
2.0
–
–
Common Mode Rejection (CMR)
(49)
with V IN
CMR
dB
V IN_CM = 400 mV*sin(2* ? *freq*t)
V IN _ DIF = 0.0 V, RS = 1.0 k ?
R FB = 15 k ? , V REFIN = 0.0 V
CMR = 20*Log(V OUT /V IN _ CM )
Freq = 100 kHz
Freq = 1.0 MHz
Freq = 10 MHz
50
40
30
–
–
–
–
–
–
SUPERVISORY AND CONTROL CIRCUITS
EN1 and EN2 Propagation Delay
INT Rise Time CL = 100 pF
INT Fall Time CL = 100 pF
INT Propagation Time
t PROP
t RINT
t FINT
t PROPINT
–
10
10
–
–
–
–
–
280
250
200
250
ns
ns
ns
ns
,
RST Transition Time (Rise and Fall)
(49) (51)
t TRRST
–
–
1.25
μs
Notes
49. This parameter is guaranteed by design, not production tested.
50. Rise and fall times are measured from the transition of a step function on the input to 90% of the change in output voltage.
51. t TRRST is given as a design guideline. The bounds for this specification are VPWR ? 58 V, total capacitance on VLS > 1.0 μF.
33937A
Analog Integrated Circuit Device Data
Freescale Semiconductor
15
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